III-V lateral bipolar junction transistor on local facetted buried oxide layer

• Main Authors: Ning, Tak H, Khojasteh, Mahmoud, Reznicek, Alexander, Hashemi, Pouya
• Format: Patent
• Language: English
• Published: 06.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semicondu...