III-V lateral bipolar junction transistor on local facetted buried oxide layer

A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semicondu...

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Bibliographic Details
Main Authors Ning, Tak H, Khojasteh, Mahmoud, Reznicek, Alexander, Hashemi, Pouya
Format Patent
LanguageEnglish
Published 06.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.
Bibliography:Application Number: US201916661446