High performance metal insulator metal capacitor

A metal insulator metal capacitor and method for fabricating a metal insulator metal capacitor (MIMcap) are disclosed. A first level metal pattern is embedded in a first dielectric layer over a substrate. The first level metal pattern has a top surface co-planar with a top surface of the first diele...

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Bibliographic Details
Main Authors Lustig, Naftali E, Ogino, Atsushi, Jing, Nan, Liang, Jim Shih-Chun
Format Patent
LanguageEnglish
Published 06.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A metal insulator metal capacitor and method for fabricating a metal insulator metal capacitor (MIMcap) are disclosed. A first level metal pattern is embedded in a first dielectric layer over a substrate. The first level metal pattern has a top surface co-planar with a top surface of the first dielectric layer. In a selected etch step, either one of the first metal pattern or the first dielectric is etched to form a stepped top surface. A conformal insulating layer on the stepped top surface. The MIMcap is formed on the conformal insulating layer in a conformal manner.
Bibliography:Application Number: US202016785454