Cobalt filling of interconnects in microelectronics

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a sou...

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Bibliographic Details
Main Authors Commander, John, Rouya, Eric, Han, Jianwen, Whitten, Kyle, Paneccasio, Jr., Vincent, Sun, Shaopeng
Format Patent
LanguageEnglish
Published 06.09.2022
Subjects
APPARATUS THEREFOR
CHEMISTRY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
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Summary:Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
Bibliography:Application Number: US202117220540