Superjunction semiconductor device including parallel PN structures and method of manufacturing thereof

• Main Author: Sakata, Toshiaki
• Format: Patent
• Language: English
• Published: 30.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device has an active region through which current flows and a termination structure region. On a front surface of a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type is provided. On a surface of the first semiconductor layer in the active region, a first parallel pn structure is provided including first columns of the first conductivity type and second columns of a second conductivity type disposed repeatedly alternating one another in a plane parallel to the front surface. In the termination structure region, a second parallel pn structure is provided including third columns of the first conductivity type and fourth columns of the second conductivity type disposed repeatedly alternating one another. On a surface of the second parallel pn structure, a first semiconductor region of the second conductivity type is provided including plural regions apart from one another.