Micro light emitting diode and manufacture method therefor

Provided is a micro-LED device, comprising: a light emitting unit comprising a light emitting layer having a first end surface, a second end surface opposite to the first end surface, and a lateral surface between the first end surface and the second end surface; a P-type semiconductor layer on the...

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Bibliographic Details
Main Authors Wu, Xinfeng, Li, Fei, Li, Huihui, Hu, Youyuan, Wang, Xinzhu, Hu, Jinxia, Zhang, Xiaotian
Format Patent
LanguageEnglish
Published 16.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a micro-LED device, comprising: a light emitting unit comprising a light emitting layer having a first end surface, a second end surface opposite to the first end surface, and a lateral surface between the first end surface and the second end surface; a P-type semiconductor layer on the first end surface; and an N-type semiconductor layer on the second end surface; a transparent insulating layer covering at least the lateral surface of the light emitting layer; and a reflecting layer on a side of the transparent insulating layer away from the light emitting unit, wherein the transparent insulating layer insulates the light emitting unit from the reflecting layer, and the reflecting layer covers at least the lateral surface of the light emitting layer.
Bibliography:Application Number: US202016902358