Reducing program verifies for multi-level NAND cells
Over time, the number of write cycles required to successfully program a multi-level cell (MLC) is reduced. Since a hard-coded value does not change over the lifetime of the device, the device may perform too many verify steps at one stage of the device lifetime and wait too long to begin verificati...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
16.08.2022
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Subjects | |
Online Access | Get full text |
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Summary: | Over time, the number of write cycles required to successfully program a multi-level cell (MLC) is reduced. Since a hard-coded value does not change over the lifetime of the device, the device may perform too many verify steps at one stage of the device lifetime and wait too long to begin verification at another stage of the device lifetime, reducing performance of the device. As discussed herein, verification for higher voltage level programming is delayed until verification for lower voltage level programming reaches at least a threshold level of success instead of using a hard-coded number of verify steps to skip. As a result, the performance drawbacks associated with skipping a hard-coded number of verify cycles may not occur. |
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Bibliography: | Application Number: US202016907594 |