TFT device, manufacturing method thereof, and TFT array substrate

A thin film transistor (TFT) device, a manufacturing method thereof, and a TFT array substrate are provided. A light-shielding layer is provided with a barrier layer for preventing copper ions in a metal layer from diffusing into a buffer layer and an active layer. The barrier layer is also provided...

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Bibliographic Details
Main Author Luo, Chuanbao
Format Patent
LanguageEnglish
Published 09.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film transistor (TFT) device, a manufacturing method thereof, and a TFT array substrate are provided. A light-shielding layer is provided with a barrier layer for preventing copper ions in a metal layer from diffusing into a buffer layer and an active layer. The barrier layer is also provided with an etch barrier layer for preventing the copper ions of the metal layer being oxidized by a fluorine-based oxidizing gas due to the fluorine-based oxidizing gas is used to dry etch the buffer layer for forming a signal via hole, so as to improve a performance stability of the TFT device. A source is electrically connected to the light-shielding layer through the signal via hole to eliminate a threshold voltage drift of the TFT.
Bibliography:Application Number: US201916618827