Semiconductor device

Provided is a semiconductor device including a substrate, a plurality of memory cells, and at least one dummy gate structure. The substrate has a memory cell region and a dummy region. The memory cells are disposed on the substrate in the memory cell region. Each memory cell includes: adjacent two s...

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Bibliographic Details
Main Authors Lin, Yi-Chuan, Chuang, Chiang-Ming, Wu, Shang-Yen
Format Patent
LanguageEnglish
Published 09.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device including a substrate, a plurality of memory cells, and at least one dummy gate structure. The substrate has a memory cell region and a dummy region. The memory cells are disposed on the substrate in the memory cell region. Each memory cell includes: adjacent two stack structures disposed on the substrate; two select gates respectively disposed outside the adjacent two stack structures; and an erase gate disposed between the adjacent two stack structures. The erase gate has a step between a topmost top surface and a lowermost top surface of the erase gate. The at least one dummy gate structure is disposed on the substrate in the dummy region.
Bibliography:Application Number: US202017068769