Heterojunction bipolar transistor and method for forming the same

A heterojunction bipolar transistor includes a bottom sub-collector layer formed over a substrate. The heterojunction bipolar transistor also includes an upper sub-collector layer formed over the bottom sub-collector layer. The heterojunction bipolar transistor also includes a collector layer formed...

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Bibliographic Details
Main Authors Chiu, Jui-Pin, Tsai, Shu-Hsiao, Hsiao, She-Hsin, Yu, Chien-Rong
Format Patent
LanguageEnglish
Published 09.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A heterojunction bipolar transistor includes a bottom sub-collector layer formed over a substrate. The heterojunction bipolar transistor also includes an upper sub-collector layer formed over the bottom sub-collector layer. The heterojunction bipolar transistor also includes a collector layer formed over the upper sub-collector layer. The heterojunction bipolar transistor also includes a base layer formed over the collector layer. The heterojunction bipolar transistor also includes an emitter layer formed over the base layer. The heterojunction bipolar transistor also includes a passivation layer covering the bottom sub-collector layer, the upper sub-collector layer, the collector layer, the base layer, and the emitter layer. The heterojunction bipolar transistor also includes a collector electrode that covers the portion of the passivation layer that is over the sidewall of the upper sub-collector layer.
Bibliography:Application Number: US202117141441