Phase-change memory device for improving resistance drift and dynamic resistance drift compensation method of the same

• Main Authors: Choi, Yoonseong, Song, Yunheub
• Format: Patent
• Language: English
• Published: 09.08.2022
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A phase-change memory device and a dynamic resistance drift compensation method thereof are provided. The phase-change memory device includes a plurality of bit lines; a plurality of source lines crossing the plurality of bit lines; a plurality of memory cells at respective intersections between the plurality of bit lines and the plurality of source lines, the plurality of memory cells each including a phase-change layer; a current generator connected to the plurality of bit lines and configured to generate a set current to be supplied to each of the plurality of memory cells; and a control driver configured to control the current generator and the plurality of bit lines to supply the set current to each of the plurality of memory cells.