Apparatuses and methods for plasma processing

A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chambe...

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Bibliographic Details
Main Authors Carruth, Megan, Blakeney, Joel, Ventzek, Peter, Chen, Zhiying, Ranjan, Alok, Nagaseki, Kazuya
Format Patent
LanguageEnglish
Published 19.07.2022
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Summary:A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chamber, accelerating the electrons from the source chamber through a dielectric injector and into the processing chamber using the electric potential gradient, and generating an electron-beam sustained plasma (ESP) in the processing chamber using the electrons from the source chamber.
Bibliography:Application Number: US201916411619