Semiconductor structure and method for forming ihe same

A method for manufacturing a semiconductor device is provided. The method includes the following steps: forming a lining layer on a substrate and a plurality of gate structures; forming a first spacer layer on the lining layer; forming a stop layer on the first spacer layer; forming a first sacrific...

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Bibliographic Details
Main Author Chuang, Che-Fu
Format Patent
LanguageEnglish
Published 05.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device is provided. The method includes the following steps: forming a lining layer on a substrate and a plurality of gate structures; forming a first spacer layer on the lining layer; forming a stop layer on the first spacer layer; forming a first sacrificial layer on the stop layer and between the gate structures; removing a portion of the first sacrificial layer so that the top surface of the first sacrificial layer is located between the upper portions of the gate structures; forming a second spacer layer on the first sacrificial layer and the gate structures; and removing a portion of the second spacer layer so that the remaining second spacer layer is located between the upper portions of the gate structures.
Bibliography:Application Number: US202017061185