Method of manufacturing integrated circuit device

In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure inc...

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Bibliographic Details
Main Authors Park, Yeongshin, Hwang, Jungheun, Kim, Jihee, Kwak, Mincheol, Yoon, Hyunchul, Kim, Joonghee
Format Patent
LanguageEnglish
Published 05.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure including a plurality of hard mask layers stacked on each other is formed. In the first area and the second area, a protective layer covering the hard mask structure is formed. On the protective layer, a photoresist layer is formed. A photoresist pattern is formed by exposing and developing the photoresist layer in the first area by using the step difference in the second area as an alignment key.
Bibliography:Application Number: US202016858591