Top-gate doped thin film transistor

Described is a thin film transistor which comprises: a dielectric comprising a dielectric material; a first structure adjacent to the dielectric, the first structure comprising a first material; a second structure adjacent to the first structure, the second structure comprising a second material whe...

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Bibliographic Details
Main Authors Le, Van H, Sharma, Abhishek A, Ma, Sean T, Dewey, Gilbert, Kavalieros, Jack T
Format Patent
LanguageEnglish
Published 14.06.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Described is a thin film transistor which comprises: a dielectric comprising a dielectric material; a first structure adjacent to the dielectric, the first structure comprising a first material; a second structure adjacent to the first structure, the second structure comprising a second material wherein the second material is doped; a second dielectric adjacent to the second structure; a gate comprising a metal adjacent to the second dielectric; a spacer partially adjacent to the gate and the second dielectric; and a contact adjacent to the spacer.
Bibliography:Application Number: US201815942169