Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuit

Embodiments of the disclosure provide a circuit structure and method to control electrostatic discharge (ESD) events in a resistor-capacitor (RC) circuit. Circuit structures according to the disclosure may include a trigger transistor coupled in parallel with the RC circuit, and a gate terminal coup...

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Bibliographic Details
Main Authors Gauthier, Jr., Robert J, Miao, Meng, Mitra, Souvick, Li, You, Loiseau, Alain F, Liang, Wei
Format Patent
LanguageEnglish
Published 31.05.2022
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Summary:Embodiments of the disclosure provide a circuit structure and method to control electrostatic discharge (ESD) events in a resistor-capacitor (RC) circuit. Circuit structures according to the disclosure may include a trigger transistor coupled in parallel with the RC circuit, and a gate terminal coupled to part of the RC circuit. A mirror transistor coupled in parallel with the RC circuit transmits a current that is less than a current through the trigger transistor. A snapback device has a gate terminal coupled to a source or drain of the mirror transistor, and a pair of anode/cathode terminals coupled in parallel with the RC circuit. A current at the gate terminal of the snapback device, derived from current in the mirror transistor, controls an anode/cathode current flow in the snapback device.
Bibliography:Application Number: US202017082182