Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication

A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device....

Full description

Saved in:
Bibliographic Details
Main Authors Buford, Benjamin, O'Brien, Kevin, Doczy, Mark, Kuo, Charles, Sato, Noriyuki, Oguz, Kaan
Format Patent
LanguageEnglish
Published 31.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
STATIC STORES
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.
Bibliography:Application Number: US201815960218