Methods for producing a 3D semiconductor memory device and structure

• Main Authors: Or-Bach, Zvi, Sekar, Deepak C, Cronquist, Brian
• Format: Patent
• Language: English
• Published: 24.05.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer; forming a plurality of first transistors each including a single crystal channel; forming a first metal layer and a second metal layer, where the first level includes the plurality of first transistors, the first metal layer, and the second metal layer; forming at least one second level disposed above the second metal layer; performing a first etch step including etching first holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching second holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where memory cells each include one memory transistor.