Method for producing an optoelectronic component, and optoelectronic component
Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and sec...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
03.05.2022
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Subjects | |
Online Access | Get full text |
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Summary: | Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations. |
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Bibliography: | Application Number: US201816635187 |