Method for producing an optoelectronic component, and optoelectronic component

Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and sec...

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Bibliographic Details
Main Authors Kopp, Fabian, Oszinda, Thomas, Molnar, Attila
Format Patent
LanguageEnglish
Published 03.05.2022
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Summary:Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.
Bibliography:Application Number: US201816635187