Sam photodiode with multiplication of a single type of carrier in a periodic multilayer region

An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of m...

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Bibliographic Details
Main Author Rothman, Johan
Format Patent
LanguageEnglish
Published 03.05.2022
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