Sam photodiode with multiplication of a single type of carrier in a periodic multilayer region
An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of m...
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Main Author | |
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Format | Patent |
Language | English |
Published |
03.05.2022
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Subjects | |
Online Access | Get full text |
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