Sam photodiode with multiplication of a single type of carrier in a periodic multilayer region
An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of m...
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Main Author | |
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Format | Patent |
Language | English |
Published |
03.05.2022
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Subjects | |
Online Access | Get full text |
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Summary: | An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap. |
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Bibliography: | Application Number: US201916692379 |