Enhancement mode III-nitride devices having an Al1-xSixO gate insulator

A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulat...

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Main Authors Liu, Xiang, Kikkawa, Toshihide, Rhodes, David Michael, Mishra, Umesh, Wu, Mo, Gritters, John Kirk, Lal, Rakesh K, Neufeld, Carl Joseph
Format Patent
LanguageEnglish
Published 03.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulator layer and partially on the III-N channel layer, the gate insulator including an amorphous Al1-xSixO layer with 0.2<x<0.8; and a gate electrode over the gate insulator, the gate electrode being positioned between the source and drain contacts.
Bibliography:Application Number: US201716070238