Semiconductor device and method for fabricating the same

A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function...

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Main Authors Li, YI-Fan, Wu, Zhen, Wu, Chih-Chiang, Chou, Shih-Min, Chen, Ti-Bin, Huang, Wen-Yen, Ho, Nien-Ting
Format Patent
LanguageEnglish
Published 03.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function metal (WFM) layer on the first region; and a diffusion barrier layer on a top surface and a sidewall of the first WFM layer on the first region and the first BBM layer on the second region. Preferably, a thickness of the first BBM layer on the second region is less than a thickness of the first BBM layer on the first region.
Bibliography:Application Number: US202016907287