Method of manufacturing semiconductor devices including formation of adhesion enhancement layer

In a method of manufacturing a semiconductor device, a first dielectric layer is formed over a substrate, an adhesion enhancement layer is formed on a surface of the first dielectric layer, and a second dielectric layer is formed on the adhesion enhancement layer.

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Bibliographic Details
Main Authors Lin, Jyh-Nan, Hsu, Kai-Shiung, Chen, Hsiao-Min, Liu, Ding-I
Format Patent
LanguageEnglish
Published 03.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method of manufacturing a semiconductor device, a first dielectric layer is formed over a substrate, an adhesion enhancement layer is formed on a surface of the first dielectric layer, and a second dielectric layer is formed on the adhesion enhancement layer.
Bibliography:Application Number: US201916664317