Field effect transistor (FET) configured to phase shift a radar signal using first and second variable voltages applied to a gate and a back gate of the FET

The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back ga...

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Bibliographic Details
Main Authors Mokhtari, Mehran, Kurdoghlian, Ara, Kang, Jongchang, Bilik, Igal
Format Patent
LanguageEnglish
Published 19.04.2022
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Summary:The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.
Bibliography:Application Number: US202016945438