Approach to bottom dielectric isolation for vertical transport fin field effect transistors

• Main Authors: Pranatharthiharan, Balasubramanian, Devarajan, Thamarai S, Bi, Zhenxing, Sankarapandian, Muthumanickam, Mehta, Sanjay C
• Format: Patent
• Language: English
• Published: 12.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A vertical transport fin field effect transistor (VT FinFET), including one or more vertical fins on a surface of a substrate, an L-shaped or U-shaped spacer trough on the substrate adjacent to at least one of the one or more vertical fins, and a gate dielectric layer on the sidewalls of the at leas...