Method for manufacturing non-volatile memory

• Main Authors: Wang, Tengfeng, Ning, Dan
• Format: Patent
• Language: English
• Published: 05.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method for manufacturing a nonvolatile memory, including the steps of: forming a gate oxide layer on a substrate; forming a stacked capacitor of a storage cell after making a logic gate polysilicon undertake at least two deposition processes; and removing the extra logic gate polysilicon by an etching process to form a storage transistor and a peripheral logic transistor. According to the method of the present invention, the stacked capacitor of the storage transistor is formed by depositing at least twice, and the memory is manufactured in a standard logic process, which makes the manufacturing process of the memory simpler, the memory has good compatibility with the logic process and has low cost.