Magnetic tunnel junction having all-around structure

A magnetic tunnel junction (MTJ) device includes a cylindrically-shaped pillar structure and a first ferromagnetic layer disposed on at least a portion of the pillar structure. The first ferromagnetic layer exhibits a magnetization that is changeable in the presence of at least one of an applied bia...

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Bibliographic Details
Main Authors Sun, Jonathan Z, Jabeur, Kotb, Worledge, Daniel, Hashemi, Pouya
Format Patent
LanguageEnglish
Published 29.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A magnetic tunnel junction (MTJ) device includes a cylindrically-shaped pillar structure and a first ferromagnetic layer disposed on at least a portion of the pillar structure. The first ferromagnetic layer exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device further includes a dielectric barrier disposed on at least a portion of the first ferromagnetic layer and a second ferromagnetic layer disposed on at least a portion of the dielectric barrier. The second ferromagnetic layer exhibits a magnetization that is fixed. The MTJ device is configured such that the first and second ferromagnetic layers and the dielectric barrier concentrically surround the pillar structure.
Bibliography:Application Number: US201916720133