Silicon carbide detector and preparation method therefor

• Main Authors: Li, Jia, Zhou, Xingye, Feng, Zhihong, Fang, Yulong, Tan, Xin, Song, Xubo, Wang, Yuangang, Lv, Yuanjie
• Format: Patent
• Language: English
• Published: 22.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SEMICONDUCTOR DEVICES

The disclosure provides a silicon carbide detector and a preparation method therefor. The silicon carbide detector comprises: a wafer, the wafer sequentially comprises, from bottom to top, a substrate, a silicon carbide P+ layer, an N-type silicon carbide insertion layer, an N+ type silicon carbide multiplication layer, an N-type silicon carbide absorption layer and a silicon carbide N+ layer; the doping concentration of the N-type silicon carbide insertion layer gradually increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer gradually decreases from bottom to top; a mesa is etched on the wafer, and the mesa is etched to an upper surface of the silicon carbide P+ layer; an N-type electrode is arranged on an upper surface of the mesa, and a P-type electrode is arranged on an upper surface of a non-mesa region.