Silicon carbide devices and methods for manufacturing the same

A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.

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Bibliographic Details
Main Authors Menath, Markus, Stranzl, Gudrun, Roesner, Michael
Format Patent
LanguageEnglish
Published 22.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.
Bibliography:Application Number: US201916360570