Apparatus for stressing semiconductor substrates

Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

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Bibliographic Details
Main Authors Albrecht, Peter D, Pitney, John A, Voronkov, Vladimir V, Falster, Robert J
Format Patent
LanguageEnglish
Published 15.03.2022
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Abstract Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
AbstractList Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Author Pitney, John A
Falster, Robert J
Voronkov, Vladimir V
Albrecht, Peter D
Author_xml – fullname: Albrecht, Peter D
– fullname: Pitney, John A
– fullname: Voronkov, Vladimir V
– fullname: Falster, Robert J
BookMark eNrjYmDJy89L5WQwcCwoSCxKLCktVkjLL1IoLilKLS7OzEtXKE7NzUzOz0spTS4BiZcmAaUSS1KLeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfGiwoaGRuZmphbGTkTExagDDwi40
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US11276583B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US11276583B23
IEDL.DBID EVB
IngestDate Fri Oct 25 05:43:26 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US11276583B23
Notes Application Number: US201916438003
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220315&DB=EPODOC&CC=US&NR=11276583B2
ParticipantIDs epo_espacenet_US11276583B2
PublicationCentury 2000
PublicationDate 20220315
PublicationDateYYYYMMDD 2022-03-15
PublicationDate_xml – month: 03
  year: 2022
  text: 20220315
  day: 15
PublicationDecade 2020
PublicationYear 2022
RelatedCompanies GlobalWafers Co., Ltd
RelatedCompanies_xml – name: GlobalWafers Co., Ltd
Score 3.392439
Snippet Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow...
SourceID epo
SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title Apparatus for stressing semiconductor substrates
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220315&DB=EPODOC&locale=&CC=US&NR=11276583B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVdH6IILkFsxzEw9ByCahCH1gG-mtZMsu6CEtJsW_78yaWi96W3ZhX_DNN7s78y3AvROoSAhBOpVeaflIUJaQiCvmCcqTZEpqserhiA0K_3kezDvwvs2F0Tqhn1ocERG1RLw32l6vd5dYqY6trB_EG1atnvJZnJrt6dh16dMCM03ibDJOx9zkPC6m5uglRrciRLL1EjTXe-hGhxT-lb0mlJWy_k0p-THsT7C3qjmBjqx6cMi3P6_14GDYPnhjscVefQo2Ooyk072pDXQ0je8kDyQeo6b49lVFwq1Uj5ZAK87WZ3CXZzM-sHDoxc86F8V0N0vvHLp4_pcXYEg_tNXy0VZMln4pRCkRhSyyJWNupJzoEvp_99P_r_EKjmjPKKTKCa6h23xs5A1ybCNu9eZ8Aep5gUY
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFetNq6KtjwiSWzDPbTwEIS-iNmmxifQWsmUDekhLk-Lfd3ZNrRe9LbuwL_jmm92d-RbgTrNKm1LKdSqNQjGRoBTKEFfEoDxPkpRMiFXHCYky83luzTvwsc2FETqhn0IcERG1QLw3wl6vdpdYvoitrO_pO1YtH8PU8eX2dKzr_NMC2XedYDrxJ57seU42k5NXB92KEZKt4aK53kMX2-Y6-8Gby7NSVr8pJTyC_Sn2VjXH0GFVH3re9ue1PhzE7YM3Flvs1SegosPIdbo3tYSOpvSd5IHEI9U8vn1ZceFWXo-WQCjO1qdwGwapFyk4dP6zzjyb7WZpnEEXz__sHCRmjtRy8aCWhBVmQWnBEIXEVhkhul1q9gUM_u5n8F_jDfSiNB7n46fkZQiHfP94eJVmXUK3WW_YFfJtQ6_FRn0BIjqENg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Apparatus+for+stressing+semiconductor+substrates&rft.inventor=Albrecht%2C+Peter+D&rft.inventor=Pitney%2C+John+A&rft.inventor=Voronkov%2C+Vladimir+V&rft.inventor=Falster%2C+Robert+J&rft.date=2022-03-15&rft.externalDBID=B2&rft.externalDocID=US11276583B2