Composite etch stop layer for contact field plate etching

The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a gate structure over a substrate and between a source region and a drain region. A composite etch stop structure is formed over the gate structure and a first inter...

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Bibliographic Details
Main Authors Lu, Hui-Ting, Jong, Yu-Chang, Wang, Pei-Lun
Format Patent
LanguageEnglish
Published 08.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a gate structure over a substrate and between a source region and a drain region. A composite etch stop structure is formed over the gate structure and a first inter-level dielectric (ILD) layer is formed over the composite etch stop structure. The composite etch stop structure has a plurality of stacked dielectric materials. The first ILD layer is etched to concurrently define contact openings extending to the substrate and a field plate opening extending to the composite etch stop structure. The contact openings and the field plate opening are concurrently filled with one or more conductive materials.
Bibliography:Application Number: US201916578293