Chemical control features in wafer process equipment

• Main Authors: Chuc, Kien, Lubomirsky, Dmitry, Tran, Toan, Hinckley, Kimberly, Yang, Jang-Gyoo, Venkataraman, Shankar, Garg, Saurabh, Chen, Xinglong, Park, Soonam, Liang, Qiwei
• Format: Patent
• Language: English
• Published: 01.03.2022
• Subjects: APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; ATOMISING APPARATUS; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; NOZZLES; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPRAYING APPARATUS; SPRAYING OR ATOMISING IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.