Resistive element and power amplifier circuit

A resistive element that includes: a substrate; a first nitride semiconductor layer; a second nitride semiconductor layer; a two-dimensional electron gas layer on the first nitride semiconductor layer side at an interface between the first nitride semiconductor layer and the second nitride semicondu...

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Bibliographic Details
Main Authors Katou, Yoshiaki, Nishio, Akihiko, Miyajima, Kenichi, Motoyoshi, Kaname
Format Patent
LanguageEnglish
Published 22.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A resistive element that includes: a substrate; a first nitride semiconductor layer; a second nitride semiconductor layer; a two-dimensional electron gas layer on the first nitride semiconductor layer side at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer; a first electrode ohmically connected to the two-dimensional electron gas layer; a second electrode ohmically connected to the two-dimensional electron gas layer; and an insulating layer between the first electrode and the second electrode in plan view. The two-dimensional electron gas layer functions as an electric resistance element. A conductive layer is not provided above the insulating layer between the first electrode and the second electrode in the plan view. The resistive element has a resistance-value stabilization structure that functions to keep a resistance value of the electric resistance element constant.
Bibliography:Application Number: US202017266086