High voltage blocking III-V semiconductor device

• Main Authors: Imam, Mohamed, Tadikonda, Ramakrishna, Pandya, Bhargav, Heinle, Jens Ulrich, Kim, Hyeongnam, Vorwerk, Manuel
• Format: Patent
• Language: English
• Published: 15.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes type IV semiconductor base substrate, first and second device areas that are electrically isolated from one another, a first region of type III-V semiconductor material formed over the first device area, a second region of type III-V semiconductor material formed over the second device area, the second region of type III-V semiconductor material being laterally electrically insulated from the first region of type III-V semiconductor material, a first high-electron mobility transistor integrally formed in the first region, and a second high-electron mobility transistor integrally formed in the second region. The first and second high-electron mobility transistors are connected in series. A source terminal of the first high-electron mobility transistor is electrically connected to the first device area. The first device area is electrically isolated from a subjacent intrinsically doped region of the base substrate by a first two-way voltage blocking device.