Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.

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Bibliographic Details
Main Authors Lochtefeld, Anthony J, Li, Jizhong
Format Patent
LanguageEnglish
Published 15.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
Bibliography:Application Number: US201916705863