Electrostatic chuck and manufacturing method therefor

Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an ele...

Full description

Saved in:
Bibliographic Details
Main Authors Kim, Yun Ho, Lee, Ki Ryong, Kim, Joo Hwan
Format Patent
LanguageEnglish
Published 15.02.2022
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.
Bibliography:Application Number: US201916973112