Transition metal dichalcogenide based magnetoelectric memory device

An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO3, (LaBi)FeO3, LuFeO3, PMN-PT, PZT, AlN, SmBiFeO3, Cr2O3, etc.) material and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, graphene, etc.); a magnet adja...

Full description

Saved in:
Bibliographic Details
Main Authors Buford, Benjamin, Lin, Chia-Ching, Gosavi, Tanay, Manipatruni, Sasikanth, Plombon, John J, Young, Ian A, Nikonov, Dmitri, Oguz, Kaan
Format Patent
LanguageEnglish
Published 08.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO3, (LaBi)FeO3, LuFeO3, PMN-PT, PZT, AlN, SmBiFeO3, Cr2O3, etc.) material and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, graphene, etc.); a magnet adjacent to a first portion of the TMD of the stack; a first interconnect adjacent to the magnet; a second interconnect adjacent to the ME material of the stack; and a third interconnect adjacent to a second portion of the TMD of the stack.
Bibliography:Application Number: US201816009035