Method for fabricating a semiconductor device

A method for fabricating a semiconductor device includes: providing a first wafer including a base substrate having a first surface and a second surface facing each other, and an element region disposed on the first surface of the base substrate, in which the first wafer includes a first semiconduct...

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Bibliographic Details
Main Authors Choi, Sang-Il, Jeon, Seong Gi, Kang, Tae Gyu, Nho, Hee Seok
Format Patent
LanguageEnglish
Published 25.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device includes: providing a first wafer including a base substrate having a first surface and a second surface facing each other, and an element region disposed on the first surface of the base substrate, in which the first wafer includes a first semiconductor chip region and a second semiconductor chip region adjacent to each other, each including a portion of the base substrate and a portion of the element region; forming a cutting pattern in the base substrate between the first semiconductor chip region and the second semiconductor chip region; grinding a part of the base substrate to form a second wafer from the first wafer; forming a stress relief layer on the second surface of the ground base substrate; and expanding the second wafer to separate the first semiconductor chip region and the second semiconductor chip region from each other.
Bibliography:Application Number: US201916381540