Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength

• Main Authors: Tsai, Min-Ying, Tu, Yeur-Luen
• Format: Patent
• Language: English
• Published: 25.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) substrate without bond interface voids and/or without delamination between layers. In some embodiments, a first high κ bonding structure is formed over a handle substrate. A device layer is formed over a sacrificial substrate. Outer most sidewalls of the device layer are between outer most sidewalls of the sacrificial substrate. A second high κ bonding structure is formed over the device layer. The first high κ bonding structure is bonded to the second high κ bonding structure, such that the device layer is between the sacrificial substrate and the handle substrate. A first removal process is performed to remove the sacrificial substrate. The first removal process comprises performing a first etch into the sacrificial substrate until the device layer is reached.