Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength
Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) substrate without bond interface voids and/or without delamination between layers. In some embodiments, a first high κ bonding structure is formed over a handle substrate. A device...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
25.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) substrate without bond interface voids and/or without delamination between layers. In some embodiments, a first high κ bonding structure is formed over a handle substrate. A device layer is formed over a sacrificial substrate. Outer most sidewalls of the device layer are between outer most sidewalls of the sacrificial substrate. A second high κ bonding structure is formed over the device layer. The first high κ bonding structure is bonded to the second high κ bonding structure, such that the device layer is between the sacrificial substrate and the handle substrate. A first removal process is performed to remove the sacrificial substrate. The first removal process comprises performing a first etch into the sacrificial substrate until the device layer is reached. |
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Bibliography: | Application Number: US201816227183 |