Semiconductor device

According to one embodiment, a semiconductor device includes a first semiconductor layer on a semiconductor substrate and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer is between the second semiconductor layer and the semiconductor substrate in a first...

Full description

Saved in:
Bibliographic Details
Main Authors Shino, Tomoaki, Tezuka, Ryuta, Noguchi, Mitsuhiro
Format Patent
LanguageEnglish
Published 18.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:According to one embodiment, a semiconductor device includes a first semiconductor layer on a semiconductor substrate and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer is between the second semiconductor layer and the semiconductor substrate in a first direction. A first conductive layer is on the second semiconductor layer and contacting the second semiconductor layer. A third semiconductor layer is spaced from the second semiconductor layer in a second direction and connected to the first semiconductor layer. A second conductive layer is spaced from the first conductive layer in the second direction and connected to the third semiconductor layer. Each of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer extends lengthwise in a third direction intersecting the first direction and the second direction.
Bibliography:Application Number: US202016996491