Semiconductor arrangement with capacitor and method of fabricating the same
A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capac...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
11.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall. |
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Bibliography: | Application Number: US201916677783 |