Semiconductor arrangement with capacitor and method of fabricating the same

A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capac...

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Bibliographic Details
Main Authors Tsai, Chia-Shiung, Wang, Chen-Jong, Hsu, Chern-Yow, Chen, Xiaomeng, Liu, Shih-Chang, Liu, Ming Chyi
Format Patent
LanguageEnglish
Published 11.01.2022
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Summary:A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall.
Bibliography:Application Number: US201916677783