Semiconductor device and method for fabricating the same

A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and th...

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Main Authors Wu, Chia-Chen, Liu, Chih-Chien, Lin, Ji-Min, Chiu, Chun-Chieh, Chang, Kai-Jiun, Chen, Tzu-Chieh, Chen, Yi-Wei, Huang, Yi-An, Cheng, Tsun-Min, Chen, Pin-Hong, Liu, Tzu-Hao, Tsai, Chih-Chieh, Wu, Po-Chih
Format Patent
LanguageEnglish
Published 11.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.
Bibliography:Application Number: US202016831827