Method of manufacturing a thin film transistor

• Main Author: Luo, Chuanbao
• Format: Patent
• Language: English
• Published: 04.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A thin film transistor is provided. The thin film transistor includes an active layer, and the active layer includes a plurality of stacked structures, and each of the stacked structures includes: a N-layer indium oxidation layer; a gallium oxidation layer, the gallium oxidation layer is provided on the indium oxidation layer of the N-layer indium oxidation layer; and a zinc oxidation layer is provided on the gallium oxidation layer. These stacked structures improve the performance of the thin film transistor. A preparation method of the thin film transistor and a display panel containing the thin film transistor is also provided.