Method of manufacturing a semiconductor device

The present invention discloses a metal gate process. A sacrificial nitride layer is introduced during the fabrication of metal gates. The gate height can be well controlled by introducing the sacrificial nitride layer. Further, the particle fall-on problem can be effectively solved.

Saved in:
Bibliographic Details
Main Authors Li, Kun-Ju, Shih, Yu-Lung, Lin, Yong-Yi, Lin, Ji-Min, Lu, Yang-Ju, Tsai, Fu-Shou, Chuang, Ching-Yang
Format Patent
LanguageEnglish
Published 28.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present invention discloses a metal gate process. A sacrificial nitride layer is introduced during the fabrication of metal gates. The gate height can be well controlled by introducing the sacrificial nitride layer. Further, the particle fall-on problem can be effectively solved.
Bibliography:Application Number: US202017017666