Substrate processing apparatus and substrate processing method

A substrate rotation mechanism rotates the substrate holder about a central axis. A top plate opposes the upper surface of the substrate and rotates about the central axis. A gas supply part supplies a treatment atmospheric gas to a radial central part of a lower space that is a space below the top...

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Bibliographic Details
Main Authors Iwao, Michinori, Muramoto, Ryo
Format Patent
LanguageEnglish
Published 28.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A substrate rotation mechanism rotates the substrate holder about a central axis. A top plate opposes the upper surface of the substrate and rotates about the central axis. A gas supply part supplies a treatment atmospheric gas to a radial central part of a lower space that is a space below the top plate. An ion generator generates and supplies ions to the treatment atmospheric gas supplied from the gas supply part. Then, in a state in which the top plate is positioned lower than when the substrate is transported into the apparatus, the treatment atmospheric gas that contains the ions is supplied to the lower space to form an ion stream that spreads radially outward from the radial central part of the lower space while rotating the substrate holder and the top plate. Accordingly, charges can be dissipated from the top plate with a simple structure.
Bibliography:Application Number: US201616071104