SiC electronic device fabricated by Al/Be co-implantation

A method for p-type doping of a silicon carbide layer includes first implantation step of implanting aluminum dopants into a preselected region of the silicon carbide layer by ion implantation, an annealing step of annealing the silicon carbide layer after performing the first implantation step, a s...

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Bibliographic Details
Main Authors Alfieri, Giovanni, Sundaramoorthy, Vinoth
Format Patent
LanguageEnglish
Published 28.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for p-type doping of a silicon carbide layer includes first implantation step of implanting aluminum dopants into a preselected region of the silicon carbide layer by ion implantation, an annealing step of annealing the silicon carbide layer after performing the first implantation step, a second implantation step of implanting beryllium dopants into the preselected region by ion implantation before the annealing step. A ratio of the total aluminum dose in the first implantation step to the total beryllium dose in the second implantation step is in a range between 0.1 and 10.
Bibliography:Application Number: US201916976667