Atomic layer deposition of protective coatings for semiconductor process chamber components

A multi-component coating composition for a surface of a chamber component comprising at least one first film layer of a yttrium oxide coated onto the surface of the chamber component using an atomic layer deposition process and at least one second film layer of zirconium oxide coated onto the surfa...

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Bibliographic Details
Main Authors Fenwick, David, Sun, Jennifer Y
Format Patent
LanguageEnglish
Published 14.12.2021
Subjects
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:A multi-component coating composition for a surface of a chamber component comprising at least one first film layer of a yttrium oxide coated onto the surface of the chamber component using an atomic layer deposition process and at least one second film layer of zirconium oxide coated onto the surface of the chamber component using an atomic layer deposition process, wherein the multi-component coating comprises YZrxOy.
Bibliography:Application Number: US201715847251