Variable resistance memory devices including self-heating layer and methods of manufacturing the same

A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resis...

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Bibliographic Details
Main Authors Chung, Jiyoon, Paik, Junhwan, Park, Yongjin, Oh, Gyuhwan, Yang, Jinwook
Format Patent
LanguageEnglish
Published 07.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resistance pattern, a selection structure on the low resistance pattern, and a second conductive line on the selection structure.
Bibliography:Application Number: US202016826778